Weak Localization and Electron-electron Interactions in Few Layer Black Phosphorus Devices

摘要

Few layer phosphorene(FLP) devices are extensively studied due to its uniqueelectronic properties and potential applications on nano-electronics . Here wepresent magnetotransport studies which reveal electron-electron interactions asthe dominant scattering mechanism in hexagonal boron nitride-encapsulated FLPdevices. From weak localization measurements, we estimate the electrondephasing length to be 30 to 100 nm at low temperatures, which exhibits astrong dependence on carrier density n and a power-law dependence ontemperature (~T-0.4). These results establish that the dominant scatteringmechanism in FLP is electron-electron interactions.